Two dimensional interstitial diffusion in mesoscopic structures (Articolo in rivista)

Type
Label
  • Two dimensional interstitial diffusion in mesoscopic structures (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Giannazzo, F; Raineri, V; Mirabella, S; De Salvador, D; Napolitani, E; Priolo, F (2004)
    Two dimensional interstitial diffusion in mesoscopic structures
    in Diffusion and defect data, solid state data. Part B, Solid state phenomena
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giannazzo, F; Raineri, V; Mirabella, S; De Salvador, D; Napolitani, E; Priolo, F (literal)
Pagina inizio
  • 351 (literal)
Pagina fine
  • 359 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Relazione su invito tenuta da F. Giannazzo, relativa agli studi sulla diffusione del B e degli autointerstiziali in Si, condotti mediante l'applicazione della Scanning Capacitance Microscopy. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 95-96 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Catania, INFM, IT-95123 Catania, Italy; Univ Catania, Dept Phys & Astron, IT-95123 Catania, Italy; CNR, IMM, IT-95121 Catania, Italy; Univ Padua, INFM, IT-35131 Padua, Italy; Univ Padua, Dept Phys, IT-35131 Padua, Italy (literal)
Titolo
  • Two dimensional interstitial diffusion in mesoscopic structures (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 3-908450-82-9 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • Richter, H; Kittler, M (literal)
Abstract
  • The two dimensional (2D) diffusion of self- interstitials (I) in crystalline Si, both at room temperature and at 800 degreesC, has been studied by quantitative SCM measurements. The 2D I emission from a I source laterally confined down to sub-micron dimensions, obtained by low-energy implantation through a patterned oxide mask, has been observed. At room temperature, I diffusion was monitored by measuring the electrical deactivation of B corresponding to the diffusing interstitial tail and it was demonstrated that this deactivation is due to compensating levels introduced by defects in the Si bandgap. At 800 degreesC I diffusion was monitored by measuring the transient enhanced diffusion of B spikes due to interstitial supersaturation produced during the annealing. In both cases, a dependence of the I depth- penetration on the original source size has been shown for mesoscopic window opening; (from 0.5 to 3 mum). (literal)
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