Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories (Articolo in rivista)

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Label
  • Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Molas, G; Bocquet, M; Buckley, J; Grampeix, H; Gely, M; Colonna, JP; Licitra, C; Rochat, N; Veyront, T; Garros, X; Martin, F; Brianceau, P; Vidal, V; Bongiorno, C; Lombardo, S; De Salvo, B; Deleonibus, S (2007)
    Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories
    in Solid-state electronics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Molas, G; Bocquet, M; Buckley, J; Grampeix, H; Gely, M; Colonna, JP; Licitra, C; Rochat, N; Veyront, T; Garros, X; Martin, F; Brianceau, P; Vidal, V; Bongiorno, C; Lombardo, S; De Salvo, B; Deleonibus, S (literal)
Pagina inizio
  • 1540 (literal)
Pagina fine
  • 1546 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 51 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • [Molas, Gabriel; Bocquet, Marc; Buckley, Julien; Grampeix, Helen; Gely, Marc; Colonna, Jean-Philippe; Licitra, Christophe; Rochat, Nevine; Veyront, Thomas; Garros, Xavier; Martin, Francois; Brianceau, Pierre; Vidal, Vincent; De Salvo, Barbara; Deleonibus, Simon] CEA, LETI Minatec, F-38054 Grenoble, France; [Bongiorno, Cosimo; Lombardo, Salvatore] CNR, IMM, I-95121 Catania, Italy (literal)
Titolo
  • Investigation of hafnium-aluminate alloys in view of integration as interpoly dielectrics of future Flash memories (literal)
Abstract
  • In this paper, we evaluate the potentialities of hafnium-aluminates (HfAlO) materials as possible candidates for the interpoly dielectrics of future Flash memory devices. HfAlO layers of different thicknesses and compositions are integrated in single-layers and in Oxide/ HfAlO/Oxide (OHO) triple-layer stacks, and analyzed in terms of coupling and insulating capabilities. We demonstrate that increasing the Hf content allows reducing the leakage current at high voltages but it results in a stronger leakage current at low voltages. We also show that once normalized in electric fields, the leakage current characteristics are independent of the high-k thickness. The electron conduction modes in these materials, at different temperatures, are also investigated. The activation energy increases with the Hf concentration in the HfAlO alloy, resulting in a higher leakage current at elevated temperatures. Finally, it is demonstrated that the conduction in triple-layer stacks is limited by a Poole-Frenkel conduction in the high-k layers, while the trap contribution in the case of single-layers becomes dominant when the HfAlO layer is thicker than 8 rim. (literal)
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