Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET’s (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET’s (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1109/TED.2008.926640 (literal)

Alternative label

• Poggi A; Moscatelli F; Solmi S; Nipoti R (2008)
  Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET’s
  in I.E.E.E. transactions on electron devices
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Poggi A; Moscatelli F; Solmi S; Nipoti R (literal)

Pagina inizio

• 2021 (literal)

Pagina fine

• 2028 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 55 (literal)

Rivista

• I.E.E.E. transactions on electron devices (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 8 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Bologna, I-40129 Bologna, Italy (literal)

Titolo

• Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET’s (literal)

Abstract

• A gate oxide obtained by wet oxidation of SiC pre-implanted with nitrogen has been investigated on MOS capacitors and implemented in a n-channel MOSFET technology. Different implantation fluences and energies in the ranges 1.5x1013 1x1015 cm-2 and 2.5 10 keV, respectively, were used with the aims to study the effect of the nitrogen concentration at the SiO2/SiC interface on MOSFET performance. The highest dose, which is able to amorphize a surface SiC layer, was also employed to take advantage of the faster oxidation rate of amorphous phase with respect to crystalline one. The electron interface trap density near the conduction band has been evaluated with different techniques both on MOS capacitors and MOSFET devices; a good agreement among the measured values has been attained. A strong reduction of the electron interface traps density located near the conduction band has been obtained in the samples with a high nitrogen concentration at the SiO2/SiC interface. The MOSFET’s with the highest nitrogen concentration at the interface (~ 1x1019 cm-3) present the highest channel mobility (21.9 cm2/Vs), the lowest threshold voltage (2.4 V) and the smallest subthreshold swing (310 mV/decade at drain current of 10-11A). (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• ANTONELLA POGGI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale esterno)
• SANDRO SOLMI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET’s" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR di

• SANDRO SOLMI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• I.E.E.E. transactions on electron devices (Rivista)

Insieme di parole chiave di

• Parole chiave di "Investigation on the Use of Nitrogen Implantation to Improve the Performance of N-Channel Enhancement 4H-SiC MOSFET’s" (Insieme di parole chiave)