Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) (Articolo in rivista)

Type
Label
  • Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1109/TDMR.2004.837209 (literal)
Alternative label
  • De Salvo B.; Gerardi C.; van Schaijk R.; Lombardo S.; Corso D.; Plantamura C.; Serafino S.; Ammendola G.; van Duuren M.; Goarin P.; Mei W.Y.; van der Jeugd K.; Baron T.; Gely M.; Mur P.; Deleonibus S. (2004)
    Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS)
    in IEEE transactions on device and materials reliability
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • De Salvo B.; Gerardi C.; van Schaijk R.; Lombardo S.; Corso D.; Plantamura C.; Serafino S.; Ammendola G.; van Duuren M.; Goarin P.; Mei W.Y.; van der Jeugd K.; Baron T.; Gely M.; Mur P.; Deleonibus S. (literal)
Pagina inizio
  • 377 (literal)
Pagina fine
  • 389 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=1369199&contentType=Journals+%26+Magazines&matchBoolean%3Dtrue%26searchField%3DSearch_All%26queryText%3D%28%28%28p_Authors%3ADe+Salvo%29+AND+p_Authors%3ALombardo%29+AND+2004%29 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 4 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CEA, LETI, Grenoble 9, France; STMicroelect, Cent R&D, I-95121 Catania, Italy; Philips Res Leuven, B-3001 Louvain, Belgium; CNR, IMM, I-95121 Catania, Italy; ASM Europe, B-3001 Louvain, Belgium; CNRS, LTM, Grenoble 9, France (literal)
Titolo
  • Performance and reliability features of advanced nonvolatile memories based on discrete traps (silicon nanocrystals, SONOS) (literal)
Abstract
  • In this paper, an overview of today's status and progress, as well as tomorrow's challenges and trends, in the field of advanced nonvolatile memories based on discrete traps is given. In particular, unique features of silicon nanocrystal and SONOS memories will be illustrated through original recent data. The main potentials and main issues of these technologies as candidates to push further the scaling limits of conventional floating-gate Flash devices will be evaluated. (literal)
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