MOCVD growth of rare earth oxides: The case of the praseodymium/oxygen system (Articolo in rivista)

Type
Label
  • MOCVD growth of rare earth oxides: The case of the praseodymium/oxygen system (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lo Nigro R, Malandrino G, Toro RG, Fragala IL (2007)
    MOCVD growth of rare earth oxides: The case of the praseodymium/oxygen system
    in Topics in applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lo Nigro R, Malandrino G, Toro RG, Fragala IL (literal)
Pagina inizio
  • 33 (literal)
Pagina fine
  • 51 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 106 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Lo Nigro R (reprint author), CNR, IMM, Stradale Primosole 50, I-95127 Catania, Italy CNR, IMM, I-95127 Catania, Italy Univ Catania, Dept Chem, I-95125 Catania, Italy (literal)
Titolo
  • MOCVD growth of rare earth oxides: The case of the praseodymium/oxygen system (literal)
Abstract
  • Chemical Vapor Deposition (CVD) uses one or more gaseous species (precursors) to form on a substrate, solid phase materials through an activated process. While today a large variety of precursors is known and rather complex deposition routes are involved, a user-friendly classification of precursor compounds as well as a viable discussion of their physical and chemical characteristics can be useful to MOCVD practitioners. In this Chapter, an overview of both the exploitation and challenges of MOCVD fabrication of praseodymium oxides will be highlighted from different points of view, including the more suited precursors, the synthesis of thin films and their stability on silicon substrates. (literal)
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