SnO2 thin films from metalorganic precursors: Synthesis, characterization, microelectronic processing and gas-sensing properties (Articolo in rivista)

Type
Label
  • SnO2 thin films from metalorganic precursors: Synthesis, characterization, microelectronic processing and gas-sensing properties (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.snb.2006.12.029 (literal)
Alternative label
  • Epifani M, Francioso L, Siciliano P, Helwig A, Mueller G, Diaz R, Arbiol J, Morante JR (2007)
    SnO2 thin films from metalorganic precursors: Synthesis, characterization, microelectronic processing and gas-sensing properties
    in Sensors and actuators. B, Chemical (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Epifani M, Francioso L, Siciliano P, Helwig A, Mueller G, Diaz R, Arbiol J, Morante JR (literal)
Pagina inizio
  • 217 (literal)
Pagina fine
  • 226 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 124 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, I-73100 Lecce, Italy; EADS Deutschland GMBH, Corp Res Ctr, D-81663 Munich, Germany; Univ Barcelona, Dept Elect, EME,CERMAE, IN2UB, Barcelona 08028, Cat, Spain; Univ Barcelona, TEM, MAT, Serv Cient Tecn, Barcelona 08028, Cat, Spain (literal)
Titolo
  • SnO2 thin films from metalorganic precursors: Synthesis, characterization, microelectronic processing and gas-sensing properties (literal)
Abstract
  • SnO2 thin films were prepared by spin-coating of Sn(II) 2-ethylhexanoate solutions onto silicon substrates, followed by heat-treatment at 500 degrees C. From the study of the starting solutions and of the final films by Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) it was concluded that the film formation started with weak physical interactions between the individual precursor molecules and then proceeded through an extensive cross-linking as the heat-treatment took place. In this way mechanically resistant and well-adhering sensing layers were prepared. High-resolution transmission electron microscopy (HRTEM), in agreement with XRD, further revealed that the sensing films heat-treated at 500 degrees C consisted of SnO2 grains with diameters of about 10 nm. The films heat-treated at 500 degrees C were able to withstand a full microelectronic processing sequence, including wet etching, Ti/Pt contact formation, and heater processing on the backside of the sensor substrates. Gas-sensing tests have evidenced responses to CO and NO2 that are comparable to commercial thick film sensors, demonstrating a clear potential toward the achievement of high-performance low power consumption gas-sensing devices. (literal)
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