http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36058
Si quantum dots for nanoelectronics: From materials to applications (Articolo in rivista)
- Type
- Label
- Si quantum dots for nanoelectronics: From materials to applications (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Lombardo S, Spinella C, Rimini E (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMM, I-95121 Catania, Italy (literal)
- Titolo
- Si quantum dots for nanoelectronics: From materials to applications (literal)
- Abstract
- This paper reviews the subject of Si quantum dots embedded in dielectric and its application to the realization of non volatile semiconductor memories. In the first part of the paper various approaches for the analysis of the materials through transmission electron microscopy (TEM) are critically discussed. The advantages coming from an innovative application of energy filtered TEM are put in clear evidence. The paper then focuses on the synthesis of the materials: two different methodologies for the realization of the dots, both based on chemical vapor deposition are described in detail, and physical models providing some understanding of the observed phenomenology are reported. We then discuss the application of this nanotechnology to the realization of the storage nodes in non volatile semiconductor memories. The following sections describe the electrical characteristics found in the test devices and some key aspects are described in terms of quantitative models. The test devices show several performance advantages, indicating that the approach is an excellent candidate for the realization of Flash memories of the nanoelectronic era. (literal)
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- Autore CNR
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