Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces (Articolo in rivista)

Type
Label
  • Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.msec.2005.09.104 (literal)
Alternative label
  • Schmeisser D, Zheng F, Perez-Dieste V, Himpsel FJ, Lo Nigro R, Toro RG, Malandrino G, Fragala IL (2006)
    Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces
    in Materials science & engineering. C, Biomimetic materials, sensors and systems (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Schmeisser D, Zheng F, Perez-Dieste V, Himpsel FJ, Lo Nigro R, Toro RG, Malandrino G, Fragala IL (literal)
Pagina inizio
  • 1122 (literal)
Pagina fine
  • 1126 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 26 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Brandenburg Tech Univ Cottbus, Angew Phys Sensor, D-03013 Cottbus, Germany; Univ Wisconsin, Dept Phys, Madison, WI 53706 USA; CNR-IMM, I-95127 Catania, Italy; Univ Catania, Dipartimento Sci Chim, I-95125 Catania, Italy; INSTM, UdR Catania, I-95125 Catania, Italy (literal)
Titolo
  • Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces (literal)
Abstract
  • The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Pr2O3/Si(001) as prepared by both, epitaxial growth and metal organic chemical vapor deposition (MOCVD), and compare to the SiO2/Si(001) System as a reference. We find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges. The results are in line with model experiments in which films of increasing film thickness are deposited in situ on bare Si(001) surfaces. (literal)
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