http://www.cnr.it/ontology/cnr/individuo/prodotto/ID36055
Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer (Articolo in rivista)
- Type
- Label
- Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Alternative label
Sciuto A, Roccaforte F, Di Franco S, Raineri V, Billotta S, Bonanno G (2007)
Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer
in Applied physics letters
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Sciuto A, Roccaforte F, Di Franco S, Raineri V, Billotta S, Bonanno G (literal)
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- Pagina fine
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMM, I-95121 Catania, Italy;
Osserv Astrofis Catania, INAF, I-95123 Catania, Italy (literal)
- Titolo
- Photocurrent gain in 4H-SiC interdigit Schottky UV detectors with a thermally grown oxide layer (literal)
- Abstract
- A large photocurrent increase in 4H-SiC interdigit Schottky UV detectors was observed in the presence of a thermally grown silicon oxide layer. In particular, internal quantum efficiency higher than unity indicated the presence of an internal gain strictly correlated with the presence of the superficial oxide on SiC. Moreover, a long recovery time, in the range of 10-19 s, was evaluated by fall-time photocurrent measurements due to the detrapping of charges in the oxide after the irradiation switching off. The photoresponse of the device was analytically described considering the lowering of the surface potential barrier due to charges trapped at the oxide/semiconductor interface. (literal)
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