Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.microrel.2007.01.022 (literal)

Alternative label

• Fiorenza P, Lo Nigro R, Raineri V, Lombardo S, Toro RG, Malandrino G, Fragala IL (2007)
  Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization
  in Microelectronics and reliability
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fiorenza P, Lo Nigro R, Raineri V, Lombardo S, Toro RG, Malandrino G, Fragala IL (literal)

Pagina inizio

• 640 (literal)

Pagina fine

• 644 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 47 (literal)

Rivista

• Microelectronics and reliability (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, I-95121 Catania, Italy; Univ Catania, Dipartimento Sci Chim, INSTM Udr Catania, I-95125 Catania, Italy (literal)

Titolo

• Defects induced anomalous breakdown kinetics in Pr2O3 by micro- and nano-characterization (literal)

Abstract

• Praseodymium based dielectric thin films have been deposited by metal-organic chemical vapour deposition (MOCVD). The Weibull slope and the characteristic time of the dielectric breakdown (BD) have been determined at nanometer scale by conductive atomic force microscopy (C-AFM). An anomalous behaviour for the dielectric BD has been found. Its physical behaviour has been described taking into account the electrical properties investigated by nanoscopic measurements performed by scanning capacitance microscopy (SCM). Current density-voltage (J-V) measurements have been carried out at different temperatures (from 100 to 200 degrees C). At low electric fields, a slight dependence of J -V characteristics in function of both temperature and electric field has been observed, while a relatively strong dependence has been found at high fields. The calculation of the activation energies for conduction mechanisms in both field regions pointed out the presence of deep defects that play a relevant role in the BD kinetics. (literal)

Prodotto di

• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SALVATORE LOMBARDO (Persona)
• PATRICK FIORENZA (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• SALVATORE LOMBARDO (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• PATRICK FIORENZA (Persona)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronics and reliability (Rivista)