Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition (Articolo in rivista)

Type
Label
  • Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2778289 (literal)
Alternative label
  • Avice M; Grossner U; Pintilie I; Svensson BG; Servidori M; Nipoti R; Nilsen O; Fjellvag H; (2007)
    Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Avice M; Grossner U; Pintilie I; Svensson BG; Servidori M; Nipoti R; Nilsen O; Fjellvag H; (literal)
Pagina inizio
  • 054513 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 102 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Note
  • Scop (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Oslo, Dept Phys, N-0316 Oslo, Norway; Univ Oslo, SMN, N-0316 Oslo, Norway; Sez Bologna, CNR-IMM, I-40129 Bologna, Italy; Univ Oslo, Dept Chem, N-0315 Oslo, Norway (literal)
Titolo
  • Electrical properties of Al203/4H-SiC structures grown by atomic layer chemicl vapor deposition (literal)
Abstract
  • Al2O3 films have been deposited on n-type and p-type 4H-SiC by atomic layer chemical vapor deposition using trimethylaluminum as a precursor for aluminum and both H2O and O-3 as an oxidant. After oxide deposition, annealing at different temperatures (800, 900, 1000 degrees C) in argon atmosphere for different durations (1, 2, 3 h) was performed. Bulk and interface properties of the oxide films were studied by capacitance-voltage, current-voltage, deep level transient spectroscopy, and thermally dielectric relaxation current (TDRC) measurements. The results reveal a decreasing flatband voltage with increasing annealing time, suggesting decrease of oxide charges and deep interface traps. After 3 h annealing at 1000 degrees C of the n-type samples, the flatband voltage is reduced to 6 V compared to a value in excess of 40 V for as-deposited samples. The TDRC measurements on annealed Al2O3/SiC (n-type) capacitors showed substantially different spectra relative to conventional SiO2/4H-SiC control samples; in the former ones no signal was recorded at temperatures less than 100 K, demonstrating a low density of shallow electron traps below the conduction band edge of 4H-SiC and hence a prospect of obtaining a high electron channel mobility in 4H-SiC metal-oxide-semiconductor field-effect devices with Al2O3 as gate dielectric. (literal)
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