Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• Severino A, La Magna A, Anzalone R, Bongiorno C, Rimini E, La Via F (2007)
  Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Severino A, La Magna A, Anzalone R, Bongiorno C, Rimini E, La Via F (literal)

Pagina inizio

• 63544 (literal)

Pagina fine

• 63544 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 101 (literal)

Rivista

• Journal of applied physics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, I-95121 Catania, Italy; Catania Univ, Dept Phys, I-95123 Catania, Italy (literal)

Titolo

• Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films (literal)

Abstract

• In this work we report an in situ transmission electron microscopy investigation of hole nucleation and growth under thermal processes. Two different systems are considered: a NiSi layer on poly-Si substrate without any interlayer and a NiSi+Mo (as metallic interlayer) system. This approach allows us to follow in situ hole formation and growth and to determine hole growth rate until the coalescence occurs. Furthermore, R-s measurements were performed for both systems to evaluate the effect of hole formation on electrical properties. The time and temperature dependences of the sheet resistance provide a relationship between the electrical properties and the morphological changes of the thin NiSi film during a thermal process. This dual characterization of nickel silicide with and without Mo ensures us on the key role of the interlayer in stabilizing the system when temperature is raised, causing a 60 degrees C shift of the temperature at which degradation occurs. Moreover, the energetics of such systems have been discussed by means of a theoretical approach based on an extended Srolovitz model of the thin film instability. This analysis shows the importance of the inclusion of the polycrystalline nature of NiSi films in the theory in order to obtain a reliable classification of the experimental data. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)

Autore CNR

• ANTONINO LA MAGNA (Persona)
• CORRADO BONGIORNO (Unità di personale interno)
• FRANCESCO LA VIA (Unità di personale interno)

Incoming links:

Autore CNR di

• ANTONINO LA MAGNA (Persona)
• FRANCESCO LA VIA (Unità di personale interno)
• CORRADO BONGIORNO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)