Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• Privitera S, Rimini E, Bongiorno C, Pirovano A, Bez R (2007)
  Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Privitera S, Rimini E, Bongiorno C, Pirovano A, Bez R (literal)

Pagina inizio

• 352 (literal)

Pagina fine

• 354 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 257 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• STMicroelect, MPA Grp, R&D Dept, I-95121 Catania, Italy; CNR-IMM, I-95121 Catania, Italy; STMicroelect, NVMTD, Adv R&D, FTM, I-20041 Agrate Brianza, MI, Italy (literal)

Titolo

• Effects of dopants on the amorphous-to-fcc transition in Ge2Sb2Te5 thin films (literal)

Abstract

• The amorphous-to-crystal transition has been studied through in situ resistance measurements in Ge2Sb2Te5 thin films doped by ion implantation with nitrogen, oxygen or fluorine at different concentrations. Enhancement of the thermal stability has been observed in O and N amorphous doped Ge2Sb2Te5. Larger effects have been found in the case of nitrogen doping. On the contrary, doping with Fluorine produced a decrease in the crystallization temperature. The electrical properties have been related to the structural phase change through in situ transmission electron microscopy analysis. The comparison between undoped and doped Ge2Sb2Te5 shows that the introduction of oxygen or nitrogen modifies in a different way the kinetics of the amorphous-to-fcc transition and gives new insight on the effects of doping with light elements in GeSbTe alloys. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• TRASPORTO IN MOS SCALATI E NUOVE STRUTTURE (MD.P05.008.001) (Modulo)

Autore CNR

• STEFANIA MARIA SERENA PRIVITERA (Persona)
• CORRADO BONGIORNO (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• TRASPORTO IN MOS SCALATI E NUOVE STRUTTURE (MD.P05.008.001) (Modulo)

Autore CNR di

• CORRADO BONGIORNO (Unità di personale interno)
• STEFANIA MARIA SERENA PRIVITERA (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)