Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.nimb.2007.01.129 (literal)

Alternative label

• Iucolano F, Giannazzo F, Roccaforte F, Romano L, Grimaldi MG, Raineri V (2007)
  Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride
  in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Iucolano F, Giannazzo F, Roccaforte F, Romano L, Grimaldi MG, Raineri V (literal)

Pagina inizio

• 336 (literal)

Pagina fine

• 339 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 257 (literal)

Rivista

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, I-95121 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95121 Catania, Italy (literal)

Titolo

• Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride (literal)

Abstract

• We studied the electrical activation of Si+ ions implanted at multiple energies (80 and 180 keV) and with a total fluence up to 2.7 x 10(14) CM-2 in heteroepitaxial GaN films on sapphire. Calibrated scanning capacitance microscopy- (SCM) is proposed as a method to measure the depth carrier profile after high temperature annealing (1100 1200 degrees C). Si electrically active fractions of 18% and 36% were obtained after low ramp rate furnace annealing at 1100 and 1200 degrees C, respectively. Interestingly, the dopant activation was significantly improved to 63% in the case of a rapid pre-annealing process at 1100 degrees C before the 1200 degrees C furnace annealing process. Furthermore, the ionised carrier fluence obtained by Hall measurements at room temperature exhibits a significant improvement for the 1100 degrees C RTA preannealed sample. This value is in good agreement with the ionised fluence calculated from the active Si profile from SCM, considering a similar to 20 meV ionisation energy for Si donors in GaN. (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)
• Ferdinando Iucolano (Unità di personale esterno)
• FABRIZIO ROCCAFORTE (Persona)

Insieme di parole chiave

• Keywords of "Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)
• Ferdinando Iucolano (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Rivista)

Insieme di parole chiave di

• Keywords of "Quantitative determination of depth carrier profiles in ion-implanted Gallium Nitride" (Insieme di parole chiave)