Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mejo.2008.02.005 (literal)

Alternative label

• Pezzimenti F; Della Corte F; Nipoti R (2008)
  Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour
  in Microelectronics journal
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Pezzimenti F; Della Corte F; Nipoti R (literal)

Pagina inizio

• 1594 (literal)

Pagina fine

• 1599 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://dx.doi.org/10.1016/j.mejo.2008.02.005 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 39 (literal)

Rivista

• Microelectronics journal (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 12 (literal)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• DIMET-Faculty of Engineering, Mediterranea University of Reggio Calabria, Via Graziella-Feo di Vito, 89100 Reggio Calabria, Italy Institute of Microelectronics and Microsystems-CNR, Via Gobetti 101, 40129 Bologna, Italy (literal)

Titolo

• Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour (literal)

Abstract

• Steady-state and turn-off switching characteristics of aluminium-implanted 4H-SiC p-i-n diodes designed for high-current density operation, are investigated experimentally and by mean of numerical simulations in the 298-523K temperature range.The diodes present circular structure with a diameter of 350 mm and employ an anode region with an aluminium depth profile peaking at6E19/cm^3 at the surface. The profile edge and the junction depth are located at 0.2 and 1.35 mm, respectively. At room temperature the measured forward current density is close to 370A/cm2 at 5V with an ideality factor alwaysless than 2 before high-current injection or device-series resistance became dominant. The transient analysis reveals a strong potential of this diodes for use in high-speed, high-power applications, especially at high temperature, with a very low turn-off recovery time (80 ns) in the whole range of test conditions.The simulated results match the experimental data, showing that the switching performance is mainly due to the poor minority charge carrier lifetime estimated to be 15ns for these implanted devices. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• FRANCESCO GIUSEPPE DELLA CORTE (Persona)
• ROBERTA NIPOTI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR di

• ROBERTA NIPOTI (Unità di personale interno)
• FRANCESCO GIUSEPPE DELLA CORTE (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronics journal (Rivista)

Insieme di parole chiave di

• Parole chiave di "Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour" (Insieme di parole chiave)