Quantitative electron energy loss spectroscopy of Si nanoclusters embedded in SiOx (Articolo in rivista)

Type
Label
  • Quantitative electron energy loss spectroscopy of Si nanoclusters embedded in SiOx (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • Nicotra G, Bongiorno C, Caristia L, Coffa S, Spinella C (2007)
    Quantitative electron energy loss spectroscopy of Si nanoclusters embedded in SiOx
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Nicotra G, Bongiorno C, Caristia L, Coffa S, Spinella C (literal)
Pagina inizio
  • 486 (literal)
Pagina fine
  • 489 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 84 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • IMM-CNR Catania; STMicroelectronics Catania. (literal)
Titolo
  • Quantitative electron energy loss spectroscopy of Si nanoclusters embedded in SiOx (literal)
Abstract
  • We have used a methodology, based on electron energy loss spectroscopy combined with energy filtered images, which allows us to quantify the clustered silicon concentration in annealed sub-stoichiometric silicon oxide layers (SiOx). This information was coupled to the chemical silicon and oxygen concentrations determined from Rutherford backscattering analyses. The silicon agglomeration kinetics was investigated as a function of the gas flows used during the plasma enhanced chemical vapor deposition process. Although the clustered Si concentration and the average cluster radius do not follow a well defined dependence on Si, O, or N concentration, separately, the ratio between the former parameter and the silicon excess concentration decreases monotonically as a function of the nitrogen concentration approaching a saturation value equal to 0.2 for nitrogen concentrations above 10 at.%. (literal)
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