Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p(+)n junctions (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p(+)n junctions (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.diamond.2006.03.008 (literal)

Alternative label

• Menichelli D; Scaringella M; Moscatelli F; Bruzzi M;, Nipoti R (2007)
  Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p(+)n junctions
  in Diamond and related materials
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Menichelli D; Scaringella M; Moscatelli F; Bruzzi M;, Nipoti R (literal)

Pagina inizio

• 6 (literal)

Pagina fine

• 11 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 16 (literal)

Rivista

• Diamond and related materials (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)
• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Florence, Dipartimento Energet, I-50139 Florence, Italy; INFN Firenze, I-50518 Sesto Fiorentino, FI, Italy; CNR-IMM, Sez Bologna, I-40129 Bologna, Italy; Univ Perugia, DIEI, I-06125 Perugia, Italy; Univ Perugia, Ist Nazl Fis Nucl, I-06125 Perugia, Italy (literal)

Titolo

• Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p(+)n junctions (literal)

Abstract

• The distribution of energy levels within the bandgap of epitaxial 4H-SiC p(+)/n junctions was studied. The junction was obtained by Al ion implantation on a nitrogen doped n-type epitaxial substrate. Thermally stimulated currents/capacitance (TSC/TSCAP) as well as current/capacitance deep level transient spectroscopy (I- and C-DLTS) were carried out over a wide temperature range (20-400 K). The two TSC/DLTS peaks associated with N-doping were detected for the first time and their trap signatures determined. Two hole traps relating to deep and shallow boron confirm that a boron contamination occurred during crystal growth. A negligible concentration of the Z(1/2) level, which is usually the dominant level produced by irradiation of ion implant, was measured. The concentrations of all observed traps were significantly lower than nitrogen one, which determines the doping. This evidence supports the high quality of the processed junctions, making these devices particularly attractive for future use in particle detection as well as in optoelectronic applications. (literal)

Prodotto di

• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)
• Sviluppo di tecnologie per una elettronica integrata a base di SiC (MD.P05.003.003) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO MOSCATELLI (Unità di personale esterno)
• ROBERTA NIPOTI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p(+)n junctions" (Insieme di parole chiave)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di tecnologie per una elettronica integrata a base di SiC (MD.P05.003.003) (Modulo)
• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)

Autore CNR di

• ROBERTA NIPOTI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale esterno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Diamond and related materials (Rivista)

Insieme di parole chiave di

• Parole chiave di "Characterization of energy levels related to impurities in epitaxial 4H-SiC ion implanted p(+)n junctions" (Insieme di parole chiave)