Temperature behavior of inhomogeneous Pt/GaN Schottky contacts (Articolo in rivista)

Type
Label
  • Temperature behavior of inhomogeneous Pt/GaN Schottky contacts (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2710770 (literal)
Alternative label
  • Iucolano F, Roccaforte F, Giannazzo F, Raineri V (2007)
    Temperature behavior of inhomogeneous Pt/GaN Schottky contacts
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Iucolano F, Roccaforte F, Giannazzo F, Raineri V (literal)
Pagina inizio
  • 92119 (literal)
Pagina fine
  • 92119 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 90 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, I-95121 Catania, Italy (literal)
Titolo
  • Temperature behavior of inhomogeneous Pt/GaN Schottky contacts (literal)
Abstract
  • In this letter, a correlation between the nanoscale localized electrical properties of the Pt/GaN Schottky barrier and the temperature behavior of macroscopic Schottky diodes is demonstrated. Although a significant improvement of the ideality factor of the diodes is achieved after annealing at 400 degrees C, local current-voltage measurements, performed with a biased tip of a conductive atomic force microscope, revealed the inhomogeneous nature of the barrier. Its nanoscale degree of homogeneity was quantitatively described by means of Tung's model [Phys. Rev. B 45, 13509 (1992)], allowing the authors to explain the temperature dependence of the electrical characteristics of the macroscopic diodes. (literal)
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