High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mee.2006.10.057 (literal)

Alternative label

• Giannazzo F, Roccaforte F, Raineri V (2007)
  High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy
  in Microelectronic engineering
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F, Roccaforte F, Raineri V (literal)

Pagina inizio

• 450 (literal)

Pagina fine

• 453 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 84 (literal)

Rivista

• Microelectronic engineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• IMM-CNR, Catania (literal)

Titolo

• High spatial and energy resolution characterization of lateral inhomogeneous Schottky barriers by conductive atomic force microscopy (literal)

Abstract

• We present a novel approach based on conductive atomic force microscope (c-AFM) for nano-scale mapping in laterally inhomogeneous metal-semiconductors Schottky contacts. For ultra-thin (1-5 nm) metal films with resistivity exceeding by about two orders of magnitude the bulk value, the current localization under the tip (10-20nm diameter) occurs. By spectroscopic analysis of the current-voltage characteristics for different tip positions, the 2D Schottky barrier height (SBH) distribution is obtained with similar to 0.1 eV energy resolution. The method was applied to explain the experimentally observed SBH lowering in macroscopic Au/4H-SiC diodes, in the presence of a not uniform SiO2 layer at the SiC/Au interface. Nano-scale mapping on the oxide free Au/4H-SiC contact demonstrates a SBH distribution peaked at 1.8 eV and with tails from 1.6 eV to 2.1 eV. When similar to 2 mn not uniform SiO2 layer is intentionally grown on SiC before contact formation, the Au/SiO2/4H-SiC SBH distribution exhibits a 0.3 eV lowering in the peak and a broadening (tails from 1.1 eV to 2.1 eV), thus explaining the macroscopically observed average effect. (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Autore CNR

• FABRIZIO ROCCAFORTE (Persona)
• FILIPPO GIANNAZZO (Persona)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)