Breakdown kinetics at nanometer scale of innovative MOS devices by conductive atomic force microscopy (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Breakdown kinetics at nanometer scale of innovative MOS devices by conductive atomic force microscopy (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mee.2006.10.072 (literal)

Alternative label

• Fiorenza P, Lo Nigro R, Raineri V, Salinas D (2007)
  Breakdown kinetics at nanometer scale of innovative MOS devices by conductive atomic force microscopy
  in Microelectronic engineering; Elsevier BV, Amsterdam (Paesi Bassi)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Fiorenza P, Lo Nigro R, Raineri V, Salinas D (literal)

Pagina inizio

• 441 (literal)

Pagina fine

• 445 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 84 (literal)

Rivista

• Microelectronic engineering (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 5 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, I-95121 Catania, Italy; STMicroelectronics, I-95121 Catania, Italy (literal)

Titolo

• Breakdown kinetics at nanometer scale of innovative MOS devices by conductive atomic force microscopy (literal)

Abstract

• The breakdown (BD) kinetics of dielectrics represent a crucial issue for the reliability of microelectronics devices. In this paper, we report on an innovative and practical approach based on Conductive Atomic Force Microscopy (C-AFM) for the determination of the BD kinetics on a bare insulator surface. This technique has been applied to Pr2O3 films grown by Metal-Organic Chemical Vapour Deposition (MOCVD) on Si(001) and to thermally grown SiO2 on 4H-SiC substrates. C-AFM clearly visualizes single breakdown spots under constant voltage stresses. The stress time on the C-AFM tip was varied from 1 x 10(-3) to 1 x 10(-1) s. The density of BD spots, upon increasing the stress time, exhibits in both cases an exponential trend. The Weibull slope of the dielectric BD statistics has been determined by direct measurements at nanometer scale on different dielectrics having different physical thicknesses. The comparison of the Weibull slopes obtained for different dielectric thicknesses with literature data points out intrinsic and extrinsic BD events in the SiO2/SiC system and Pr2O3 based layers, respectively. In the case of the SiO2/SiC system, BD kinetics have been demonstrated to follow the percolation model, while the role of extrinsic phenomena in the BD of Pr2O3 films has been proved. (literal)

Editore

• Elsevier BV (Editore)

Prodotto di

• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• PATRICK FIORENZA (Persona)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• PATRICK FIORENZA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Editore di

• Elsevier BV (Editore)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Microelectronic engineering (Rivista)