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Experimental study of single-electron phenomena in silicon nanocrystal memories (Articolo in rivista)
- Type
- Label
- Experimental study of single-electron phenomena in silicon nanocrystal memories (Articolo in rivista) (literal)
- Anno
- 2007-01-01T00:00:00+01:00 (literal)
- Alternative label
Pace C, Crupi F, Corso D, Lombardo S (2007)
Experimental study of single-electron phenomena in silicon nanocrystal memories
in Journal of nanoscience and nanotechnology (Print)
(literal)
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- Pace C, Crupi F, Corso D, Lombardo S (literal)
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- Pagina fine
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- Rivista
- Note
- ISI Web of Science (WOS) (literal)
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- Univ Calabria, DEIS, I-87036 Cosenza, Italy;
CNR-IMM, I-95121 Catania, Italy (literal)
- Titolo
- Experimental study of single-electron phenomena in silicon nanocrystal memories (literal)
- Abstract
- In this paper we present experimental evidence for single-electron phenomena in solid-state memories based on silicon nanocrystals as storage elements. The stepwise evolution of the channel current of a written memory cell biased in the subthreshold regime is monitored by means of a purposely designed low noise acquisition system with a bandwidth of 1 kHz. Each channel current step-up is ascribed to a single-electron emission from the silicon nanocrystal to the silicon substrate and each current step-down is ascribed to a single-electron capture from the silicon substrate into the silicon nanocrystal. The effect of the measurement system bandwidth on the detection of single-electron events is discussed and a procedure for extracting the threshold voltage shift associated to these events is proposed. It is shown that single-electron charging and discharging events in a memory cell with an area of 4.5 x 10(-10) cm(2) can cause threshold voltage shift at room-temperature of the order of several millivolts. Qualitative explanation for the observed threshold voltage shift distribution is given. (literal)
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