http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35937
Praseodymium based high-k dielectrics grown on Si and SiC substrates (Articolo in rivista)
- Type
- Label
- Praseodymium based high-k dielectrics grown on Si and SiC substrates (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.mssp.2006.10.026 (literal)
- Alternative label
Lo Nigro R, Toro RG, Malandrino G, Fragala IL, Raineri V, Fiorenza P (2006)
Praseodymium based high-k dielectrics grown on Si and SiC substrates
in Materials science in semiconductor processing
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Lo Nigro R, Toro RG, Malandrino G, Fragala IL, Raineri V, Fiorenza P (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMM, I-95121 Catania, Italy;
Catania Univ, Dipartimento Sci Chim, I-95125 Catania, Italy;
UdR Catania, INSTM, I-95125 Catania, Italy (literal)
- Titolo
- Praseodymium based high-k dielectrics grown on Si and SiC substrates (literal)
- Abstract
- High-k polycrystalline Pr2O3 thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si(001) and 4H-SiC(0001) substrates. MOCVD processes have been carried out from the Pr(tmhd)(3) (H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione) precursor. Complete structural and morphological characterization of films has been carried out using several techniques (X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)). Polycrystalline Pr2O3 films have been obtained and at the interface a Praseodymium silicate amorphous layer has been observed on both substrates. The electrical properties of the dielectric praseodymium films have been evaluated. (literal)
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- Autore CNR
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