Praseodymium based high-k dielectrics grown on Si and SiC substrates (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Praseodymium based high-k dielectrics grown on Si and SiC substrates (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mssp.2006.10.026 (literal)

Alternative label

• Lo Nigro R, Toro RG, Malandrino G, Fragala IL, Raineri V, Fiorenza P (2006)
  Praseodymium based high-k dielectrics grown on Si and SiC substrates
  in Materials science in semiconductor processing
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Lo Nigro R, Toro RG, Malandrino G, Fragala IL, Raineri V, Fiorenza P (literal)

Pagina inizio

• 1073 (literal)

Pagina fine

• 1078 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 9 (literal)

Rivista

• Materials science in semiconductor processing (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR-IMM, I-95121 Catania, Italy; Catania Univ, Dipartimento Sci Chim, I-95125 Catania, Italy; UdR Catania, INSTM, I-95125 Catania, Italy (literal)

Titolo

• Praseodymium based high-k dielectrics grown on Si and SiC substrates (literal)

Abstract

• High-k polycrystalline Pr2O3 thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si(001) and 4H-SiC(0001) substrates. MOCVD processes have been carried out from the Pr(tmhd)(3) (H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione) precursor. Complete structural and morphological characterization of films has been carried out using several techniques (X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)). Polycrystalline Pr2O3 films have been obtained and at the interface a Praseodymium silicate amorphous layer has been observed on both substrates. The electrical properties of the dielectric praseodymium films have been evaluated. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Autore CNR

• RAFFAELLA LO NIGRO (Unità di personale interno)
• ROBERTA GRAZIA TORO (Unità di personale interno)
• PATRICK FIORENZA (Persona)
• VITO RAINERI (Persona)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• RAFFAELLA LO NIGRO (Unità di personale interno)
• PATRICK FIORENZA (Persona)
• ROBERTA GRAZIA TORO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali multifunzionali, e innovativi per componenti integrati (MD.P05.003.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science in semiconductor processing (Rivista)