Praseodymium based high-k dielectrics grown on Si and SiC substrates (Articolo in rivista)

Type
Label
  • Praseodymium based high-k dielectrics grown on Si and SiC substrates (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.mssp.2006.10.026 (literal)
Alternative label
  • Lo Nigro R, Toro RG, Malandrino G, Fragala IL, Raineri V, Fiorenza P (2006)
    Praseodymium based high-k dielectrics grown on Si and SiC substrates
    in Materials science in semiconductor processing
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lo Nigro R, Toro RG, Malandrino G, Fragala IL, Raineri V, Fiorenza P (literal)
Pagina inizio
  • 1073 (literal)
Pagina fine
  • 1078 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 9 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM, I-95121 Catania, Italy; Catania Univ, Dipartimento Sci Chim, I-95125 Catania, Italy; UdR Catania, INSTM, I-95125 Catania, Italy (literal)
Titolo
  • Praseodymium based high-k dielectrics grown on Si and SiC substrates (literal)
Abstract
  • High-k polycrystalline Pr2O3 thin films have been deposited by metal organic chemical vapor deposition (MOCVD) technique on Si(001) and 4H-SiC(0001) substrates. MOCVD processes have been carried out from the Pr(tmhd)(3) (H-tmhd = 2,2,6,6-tetramethyl-3,5-heptandione) precursor. Complete structural and morphological characterization of films has been carried out using several techniques (X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)). Polycrystalline Pr2O3 films have been obtained and at the interface a Praseodymium silicate amorphous layer has been observed on both substrates. The electrical properties of the dielectric praseodymium films have been evaluated. (literal)
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