A measurement technique for thermoelectric power of CMOS layers at the wafer level (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• A measurement technique for thermoelectric power of CMOS layers at the wafer level (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.sna.2006.03.028 (literal)

Alternative label

• Mancarella F; Roncaglia A; Cardinali GC (2006)
  A measurement technique for thermoelectric power of CMOS layers at the wafer level
  in Sensors and actuators. A, Physical (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Mancarella F; Roncaglia A; Cardinali GC (literal)

Pagina inizio

• 289 (literal)

Pagina fine

• 295 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.sciencedirect.com/science/article/pii/S0924424706002706 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 132 (literal)

Rivista

• Sensors and actuators. A, Physical (Rivista)

Note

• Scopu (literal)
• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM Sez Bologna, I-40129 Bologna, Italy (literal)

Titolo

• A measurement technique for thermoelectric power of CMOS layers at the wafer level (literal)

Abstract

• We propose a method aimed at executing accurate thermoelectric power measurements at the wafer level on micromachined test structures. In order to compensate for instrumental offsets and sensitivity limits typically existing in a standard wafer-level test instrumentation, a special purpose extraction technique is applied. The influence of air-convection and heating/cooling effects on the measurement is also discussed by carefully evaluating the results of finite-element simulations of heat exchange in the test structure. In order to validate the technique, test measurements on p and n-doped polysilicon layers are presented and compared with other results from the literature. Moreover, the accuracy of the measurement technique and its temperature resolution are discussed. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Studio e sviluppo di microsistemi per analisi chimica (MD.P05.013.001) (Modulo)

Autore CNR

• FULVIO MANCARELLA (Unità di personale esterno)
• ALBERTO RONCAGLIA (Persona)
• GIAN CARLO CARDINALI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "A measurement technique for thermoelectric power of CMOS layers at the wafer level" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIAN CARLO CARDINALI (Unità di personale interno)
• ALBERTO RONCAGLIA (Persona)
• FULVIO MANCARELLA (Unità di personale esterno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Studio e sviluppo di microsistemi per analisi chimica (MD.P05.013.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Sensors and actuators. A, Physical (Rivista)

Insieme di parole chiave di

• Parole chiave di "A measurement technique for thermoelectric power of CMOS layers at the wafer level" (Insieme di parole chiave)