http://www.cnr.it/ontology/cnr/individuo/prodotto/ID3585
Synthesis and characterization of Fe3Si/SiO2 structures for spintronics (Articolo in rivista)
- Type
- Label
- Synthesis and characterization of Fe3Si/SiO2 structures for spintronics (Articolo in rivista) (literal)
- Anno
- 2008-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1002/pssa.200723464 (literal)
- Alternative label
Mantovan, R; Georgieva, M; Fanciulli, M; Goikhman, A; Barantcev, N; Lebedinskii, Y; Zenkevich, A (2008)
Synthesis and characterization of Fe3Si/SiO2 structures for spintronics
in Physica status solidi. A, Applications and materials science (Print)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Mantovan, R; Georgieva, M; Fanciulli, M; Goikhman, A; Barantcev, N; Lebedinskii, Y; Zenkevich, A (literal)
- Pagina inizio
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://onlinelibrary.wiley.com/doi/10.1002/pssa.200723464/abstract (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- \"[Mantovan, R.; Georgieva, M.; Fanciulli, M.] INFM, Lab Nazl MDM CNR, Agrate Brianza, MI, Italy; [Goikhman, A.; Barantcev, N.; Lebedinskii, Yu.; Zenkevich, A.] Moscow Engn Phys Inst, Moscow 115409, Russia (literal)
- Titolo
- Synthesis and characterization of Fe3Si/SiO2 structures for spintronics (literal)
- Abstract
- The Fe3Si thin film is a good candidate as ferromagnetic electrode in spintronics devices due to its high spin polarization and high Curie temperature. The use of Fe3Si in contact with a thin SiO2 barrier can have various applications in practical devices, such as magnetic tunnel junctions. We report on the synthesis of Fe3Si/SiO2 structures, in one vacuum cycle, by pulsed laser deposition and glow-discharge plasma oxidation followed by vacuum annealing. The structural and morphological characterization of the Fe3Si/SiO2 stacks is performed by in-situ X-ray photoelectron spectroscopy and with atomic force microscopy. Using a Fe-57 tracer layer, conversion electron Mossbauer spectroscopy is performed at the Fe3Si/SiO2 interface, proving the formation of a ferromagnetic phase with no paramagnetic inclusions. Our experimental results indicate that the Fe3Si/SiO2 stack is a promising system for application in spintronics devices. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. (literal)
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