High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect (Articolo in rivista)

Type
Label
  • High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2337861 (literal)
Alternative label
  • Sciuto A; Roccaforte F; Di Franco S; Raineri V; Bonanno G (2006)
    High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Sciuto A; Roccaforte F; Di Franco S; Raineri V; Bonanno G (literal)
Pagina inizio
  • 81111 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 89 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, I-95121 Catania, Italy; Osserv Astrofis Catania, INAF, I-95123 Catania, Italy (literal)
Titolo
  • High responsivity 4H-SiC Schottky UV photodiodes based on the pinch-off surface effect (literal)
Abstract
  • In this letter, high responsivity 4H-SiC vertical Schottky UV photodiodes based on the pinch-off surface effect, obtained by means of self-aligned Ni2Si interdigit contacts, are demonstrated. The diode area was 1 mm(2), with a 37% directly exposed to the radiation. The dark current was about 200 pA at -50 V. Under a 256 nm UV illumination, a current increase of more than two orders of magnitude is observed, resulting in a 78% internal quantum efficiency. The vertical photodiodes showed an ultraviolet-visible rejection ratio > 7x10(3) and a responsivity a factor of about 1.8 higher than a conventional planar metal-semiconductor-metal structure. (literal)
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