Investigation of the indium-boron interaction in silicon (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Investigation of the indium-boron interaction in silicon (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.2201443 (literal)

Alternative label

• Scalese S; Grasso S; Italia M; Privitera V; Christensen JS; Svensson BG (2006)
  Investigation of the indium-boron interaction in silicon
  in Journal of applied physics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Scalese S; Grasso S; Italia M; Privitera V; Christensen JS; Svensson BG (literal)

Pagina inizio

• 113516-1 (literal)

Pagina fine

• 113516-4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://jap.aip.org/resource/1/japiau/v99/i11/p113516_s1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 99 (literal)

Rivista

• Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 11 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, I-95121 Catania, Italy; Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, N-0316 Oslo, Norway (literal)

Titolo

• Investigation of the indium-boron interaction in silicon (literal)

Abstract

• The interaction between indium and boron coimplanted in silicon has been investigated. In particular, the effects of the coimplantation on the diffusion and the electrical activation have been studied in comparison with the single B or In implanted samples. It is shown that, by means of coimplantation, it is possible to obtain p-type carrier concentration profiles with a concentration peak higher than the ones achievable by the single In doping, but with the further advantage of a shallower carrier distribution with respect to the single B implant. It is found that this is due to the formation of In-B complexes with an acceptor level deeper than the one related to substitutional B. (literal)

Prodotto di

• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)
• SILVIA SCALESE (Persona)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)
• SILVIA SCALESE (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of applied physics (Rivista)