Effects of implantation defects on the carrier concentration of 6H-SiC (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Effects of implantation defects on the carrier concentration of 6H-SiC (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Alternative label

• Ruggiero A, Libertino S, Roccaforte F, La Via F, Calcagno L (2006)
  Effects of implantation defects on the carrier concentration of 6H-SiC
  in Applied physics. A, Materials science & processing (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ruggiero A, Libertino S, Roccaforte F, La Via F, Calcagno L (literal)

Pagina inizio

• 543 (literal)

Pagina fine

• 547 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 82 (literal)

Rivista

• Applied physics. A, Materials science & processing (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy; CNR, IMM, Sezione Catania, I-95121 Catania, Italy (literal)

Titolo

• Effects of implantation defects on the carrier concentration of 6H-SiC (literal)

Abstract

• The effects of ion irradiation defects on the carrier concentration of 6H-SiC epitaxial layer were studied by current-voltage (I-V), capacitance.-voltage (C-V) measurements, thermally stimulated capacitance and deep level transient spectroscopy. The defects were produced by irradiation with 10 MeV C+ at a fluence of 10(11) ions/cm(2) supercript stop and subsequent thermal annealings were carried out in the temperature range 500-1700 K under N-2 flux. I-V and C-V measurements reveal the presence of a high defect concentration after irradiation and annealing at temperature lower than 1000 K. Thermally stimulated capacitance measurements show that some of the defects induce a deactivation of the nitrogen donor, while some of the generated defects, behaving as donor-like traps, contribute to increase the material free carrier concentration at temperatures above their freezing point. Deep level transient spectroscopy measurements performed in the temperature range 150-450 K show the presence of several overlapping traps after ion irradiation and annealing at 1000 K: these traps suffer a recovery and a transformation at higher temperatures. The annealing of all traps at temperatures as high as 1700 K allows one to completely restore the n-type conductivity. The defects mainly responsible of the observed change in the carrier concentration are identified. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)

Autore CNR

• SEBANIA LIBERTINO (Unità di personale interno)
• FRANCESCO LA VIA (Unità di personale interno)
• FABRIZIO ROCCAFORTE (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• SEBANIA LIBERTINO (Unità di personale interno)
• FRANCESCO LA VIA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics. A, Materials science & processing (Rivista)