High growth rate process in a SiC horizontal CVD reactor using HCl (Articolo in rivista)

Type
Label
  • High growth rate process in a SiC horizontal CVD reactor using HCl (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • La Via F, Galvagno G, Roccaforte F, Giannazzo F, Di Franco S, Ruggiero A, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Portuese F, Abbondanza G, Abbagnale G, Veneroni A, Omarini F, Zamolo L, Masi M, Valente GL, Crippa D (2006)
    High growth rate process in a SiC horizontal CVD reactor using HCl
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • La Via F, Galvagno G, Roccaforte F, Giannazzo F, Di Franco S, Ruggiero A, Reitano R, Calcagno L, Foti G, Mauceri M, Leone S, Pistone G, Portuese F, Abbondanza G, Abbagnale G, Veneroni A, Omarini F, Zamolo L, Masi M, Valente GL, Crippa D (literal)
Pagina inizio
  • 48 (literal)
Pagina fine
  • 50 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 83 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy; LPE, I-20021 Bollate, MJ, Italy; Catania Univ, Dept Phys, I-95123 Catania, Italy; BIC Sicilia, Epitaxial Technol Ctr, I-95030 Catania, Italy; STM, I-95121 Catania, Italy; Politecn Milan, Dipartimento Chim Mat & Ingn Chim G Natta, I-20133 Milan, Italy (literal)
Titolo
  • High growth rate process in a SiC horizontal CVD reactor using HCl (literal)
Abstract
  • The results of a new epitaxial process using ail industrial 6 x 2(n) wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H-2 > 0.05%) and an increase of the growth rate until about 20 mu m/h has been measured. Photoluminescence at room temperature and at 50 K was used for defects quantification and distribution. On these wafers grown using HCl high voltage Schottky diodes have been realized. The diodes were analyzed by current-voltage (I-V) characteristics. (literal)
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