4H SiC epitaxial growth with chlorine addition (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• 4H SiC epitaxial growth with chlorine addition (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1002/cvde.200506465 (literal)

Alternative label

• La Via F, Galvagno G, Foti G, Mauceri M, Leone S, Pistone G, Abbondanza G, Veneroni A, Masi M, Valente GL, Crippa D (2006)
  4H SiC epitaxial growth with chlorine addition
  in Chemical vapor deposition (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• La Via F, Galvagno G, Foti G, Mauceri M, Leone S, Pistone G, Abbondanza G, Veneroni A, Masi M, Valente GL, Crippa D (literal)

Pagina inizio

• 509 (literal)

Pagina fine

• 515 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 12 (literal)

Rivista

• Chemical vapor deposition (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy; Catania Univ, Dept Phys, I-95123 Catania, Italy; BIC Sicilia, Epitaxial Technol Ctr, I-95030 Catania, Italy; Politecn Milan, Chem Mat & Chem Engn Dept, I-20133 Milan, Italy; LPE, I-20021 Bollate, MI, Italy (literal)

Titolo

• 4H SiC epitaxial growth with chlorine addition (literal)

Abstract

• The growth rate of a 4H-SiC epitaxial layer has been increased by a factor of 19 (up to 112 mu m h(-1)) with respect to the standard process, with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl has been characterized by electrical, optical, and structural characterization methods. The effects of various deposition parameters on the epitaxial growth process have been described, and an explanation of this behavior in terms of the diffusion coefficient on the surface, D-s, and the ratio between the characteristic times, tau(D):tau(G), has been provided. The diodes, manufactured on the epitaxial layer grown with the addition of HCl at 1600 degrees C, have electrical characteristics comparable with the standard epitaxial process. This process is very promising for high-power devices with a breakdown voltage of 10 kV. (literal)

Prodotto di

• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO LA VIA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nuovi processi per la produzione di wafer di Carburo di Silicio e nuove applicazioni nell'ambito del fotovoltaico e dei MEMS (MD.P05.009.001) (Modulo)

Autore CNR di

• FRANCESCO LA VIA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Chemical vapor deposition (Rivista)