Temperature dependence of the c-axis drift mobility in 4H-SIC (Articolo in rivista)

Type
Label
  • Temperature dependence of the c-axis drift mobility in 4H-SIC (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Galvagno G, Roccaforte F, Ruggiero A, Calcagno L, Zanetti E, Saggio M, Portuese F, La Via F (2006)
    Temperature dependence of the c-axis drift mobility in 4H-SIC
    in Microelectronic engineering
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Galvagno G, Roccaforte F, Ruggiero A, Calcagno L, Zanetti E, Saggio M, Portuese F, La Via F (literal)
Pagina inizio
  • 45 (literal)
Pagina fine
  • 47 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 83 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, I-95121 Catania, Italy; Univ Catania, Dept Phys & Astron, I-95121 Catania, Italy; STMicroelectronics, I-95121 Catania, Italy; BIC Sicilia, Epitaxial Technol Ctr, I-95030 Catania, Italy (literal)
Titolo
  • Temperature dependence of the c-axis drift mobility in 4H-SIC (literal)
Abstract
  • The electrical characteristics of 4H-SiC Schottky diodes were performed in the temperature range 80-700 K, in order to determine the temperature dependence of the drift mobility. At room temperature, a value of 724 cm(2)/(V s) was found, which decreased to 48.6 cm(2)/ (V s) at 700 K. In the temperature range 200-700 K, a dependence of the mobility as T-3 was determined, that can be correlated to the presence of material defects. (literal)
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Autore CNR

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