Top-down contact lithography fabrication of a TiO2 nanowire array over a SiO2 mesa (Articolo in rivista)

Type
Label
  • Top-down contact lithography fabrication of a TiO2 nanowire array over a SiO2 mesa (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1088/0957-4484/17/15/025 (literal)
Alternative label
  • Francioso L, Siciliano P (2006)
    Top-down contact lithography fabrication of a TiO2 nanowire array over a SiO2 mesa
    in Nanotechnology (Bristol. Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Francioso L, Siciliano P (literal)
Pagina inizio
  • 3761 (literal)
Pagina fine
  • 3767 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 17 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 15 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Lecce, I-73100 Lecce, Italy (literal)
Titolo
  • Top-down contact lithography fabrication of a TiO2 nanowire array over a SiO2 mesa (literal)
Abstract
  • A fast and cheap nanofabrication process for a titania (TiO2) nanostructured nanowire array with a lateral section ranging from 90 to 180 nm and 1.4 mm in length is presented. As an alternative to typical pattern transfer techniques for submicron fabrication, this work focused on a standard 365 nm ultraviolet (UV) photolithographic process that is able to fabricate sol-gel nanostructured titania nanowires from a solid thin film onto a silicon oxide mesa. Useful process parameters like anisotropy and bias have been calculated. Finally, in order to carry out electrical characterization, the TiO2 nanowire-based array was electrically contacted by platinum electrodes and tested with EtOH pulses to validate enhanced gas sensor device performance and to verify electrical conductivity of these nanostructures. (literal)
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