Nanostructured In2O3-SnO2 sol-gel thin film as material for NO2 detection (Articolo in rivista)

Type
Label
  • Nanostructured In2O3-SnO2 sol-gel thin film as material for NO2 detection (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.snb.2005.03.124 (literal)
Alternative label
  • Francioso L, Forleo A, Capone S, Epifani M, Taurino AM, Siciliano P (2006)
    Nanostructured In2O3-SnO2 sol-gel thin film as material for NO2 detection
    in Sensors and actuators. B, Chemical (Print); Elsevier B.V., Amsterdam (Belgio)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Francioso L, Forleo A, Capone S, Epifani M, Taurino AM, Siciliano P (literal)
Pagina inizio
  • 646 (literal)
Pagina fine
  • 655 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.journals.elsevier.com/sensors-and-actuators-b-chemical/ (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 114 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 10 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Lecce, I-73100 Lecce, Italy (literal)
Titolo
  • Nanostructured In2O3-SnO2 sol-gel thin film as material for NO2 detection (literal)
Abstract
  • Nanocrystalline SnO2, In2O3 and In2O3-SnO2 thin films have been prepared by modified sol-gel methods making use of no-standard precursors and a suitable surfactant. The oxide thin films have been used as gas-sensing layers in chemoresistive gas sensors and their performances in the detection of nitrogen dioxide (2-20 ppm in dry air) have been analysed by electrical characterization in controlled atmosphere. The samples have been structurally and morphologically characterized by X-ray diffraction and SEM, respectively. Good gas-sensing responses towards NO, have been found for all the prepared samples with improved performances for the In2O3-SnO2 based sensor. The performances of the sensors have been discussed according to the surface chemical reactions between the gas phase and the semiconductor. (literal)
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