Critical issues in the focused ion beam patterning of nanometric hole matrixes on GaAs based semiconducting devices (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Critical issues in the focused ion beam patterning of nanometric hole matrixes on GaAs based semiconducting devices (Articolo in rivista) (literal)

Anno

• 2006-01-01T00:00:00+01:00 (literal)

Alternative label

• Catalano M, Taurino A, Lomascolo M, Schertel A, Orchowski A (2006)
  Critical issues in the focused ion beam patterning of nanometric hole matrixes on GaAs based semiconducting devices
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Catalano M, Taurino A, Lomascolo M, Schertel A, Orchowski A (literal)

Pagina inizio

• 1758 (literal)

Pagina fine

• 1762 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 17 (literal)

Rivista

• Nanotechnology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Italian Natl Res Council, CNR, IMM, Lecce Sect, I-73100 Lecce, Italy; Carl Zeiss SMT, Nano Technol Syst Div, D-73447 Oberkochen, Germany (literal)

Titolo

• Critical issues in the focused ion beam patterning of nanometric hole matrixes on GaAs based semiconducting devices (literal)

Abstract

• This work investigates the critical issues in the focused ion beam (FIB) nanopatterning of semiconducting devices. Matrixes of holes with diameter of about 150 nm were drilled by FIB on the topmost layers of a quantum dot based device. In order to study the presence of artefacts in the active region of the device, the milling parameters were investigated. A careful analysis of the ion beam effects on the structural and morphological features of the holes, mainly due to the heterogeneous composition of the layers to be milled, demonstrated that important deviations from the expected structures, in terms of size, shape and geometry of the holes, as well as layer amorphization and damage, occur. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi ed optoelettronica a base di semiconduttori composti (MD.P05.014.003) (Modulo)

Autore CNR

• MASSIMO CATALANO (Persona)
• ANTONIETTA TAURINO (Unità di personale interno)
• MAURO LOMASCOLO (Persona)

Incoming links:

Autore CNR di

• MASSIMO CATALANO (Persona)
• MAURO LOMASCOLO (Persona)
• ANTONIETTA TAURINO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi ed optoelettronica a base di semiconduttori composti (MD.P05.014.003) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)