http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35781

Wide band-gap silicon-carbon alloys deposited by very high frequency plasma enhanced chemical vapor deposition (Articolo in rivista)

Type

Articolo in rivista (Classe)
Prodotto della ricerca (Classe)

Label

Wide band-gap silicon-carbon alloys deposited by very high frequency plasma enhanced chemical vapor deposition (Articolo in rivista) (literal)

Anno

2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

10.1063/1.1786679 (literal)

Alternative label

Summonte C; Rizzoli R; Bianconi M; Desalvo A; Iencinella D; Giorgis F. (2004)
Wide band-gap silicon-carbon alloys deposited by very high frequency plasma enhanced chemical vapor deposition
in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Summonte C; Rizzoli R; Bianconi M; Desalvo A; Iencinella D; Giorgis F. (literal)

Pagina inizio

3987 (literal)

Pagina fine

3997 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

http://jap.aip.org/resource/1/japiau/v96/i7/p3987_s1 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

96 (literal)

Rivista

Journal of applied physics (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

11 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

7 (literal)

Note

Scopu (literal)
ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

a CNR-IMM, Sec. Bologna, via Gobetti, 101, I-40129 Bologna, Italy b DICASM, University of Bologna, viale Risorgimento 2, I-40136 Bologna, Italy c Department of Physics, Politecnico of Torino, Corso Duca degli Abruzzi 24, I-10129 Torino, Italy d Mat. and Microsystems Laboratory, Lungo Piazza d'Armi 6, I-10034 Chivasso (Torino), Italy (literal)

Titolo

Wide band-gap silicon-carbon alloys deposited by very high frequency plasma enhanced chemical vapor deposition (literal)

Abstract

The use of very high frequency (VHF) plasma enhanced chemical vapor deposition in a capacitive discharge is investigated to fabricate hydrogenated amorphous silicon carbon alloys, using silane and methane as silicon and carbon precursors, respectively, and hydrogen dilution of the gas mixture. The properties of samples differ significantly from that is normally observed for rf deposition. A wide band-gap material is obtained, with a carbon ratio ranging from 0.2 to 0.63. An energy gap up to 3.4 eV is measured, indicating a large sp(3) content. The most interesting properties are observed using 90% hydrogen dilution and 350 degreesC as substrate temperature. In this case, a Si-C bond concentration up to 6x10(22) cm(-3) was measured for stoichiometric samples, associated to a highly crosslinked structure and no detectable Si-CH3 bending signal. The role of hydrogen in determining the optical properties of the film is established and is shown to affect mainly the valence electron concentration. Based on the free energy model, hydrogen bonding is observed to lie in between a random and chemically ordered configuration. The results are obtained at a deposition rate much larger than both rf and electron cyclotron resonance deposition, and are associated to a limited gas consumption, both aspects being advantageous for practical applications. The large Si-C bond concentration, associated to a limited silicon and carbon hydrogenation, makes the VHF deposited a-SiC:H a good starting material for subsequent crystallization. (literal)

Editore