Structural characterization and oxygen concentration profiling of a Co/Si multilayer structure (Articolo in rivista)

Type
Label
  • Structural characterization and oxygen concentration profiling of a Co/Si multilayer structure (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Alternative label
  • Piro, AM; Romano, L; Spada, A; La Via, F; Grimaldi, MG; Rimini, E (2004)
    Structural characterization and oxygen concentration profiling of a Co/Si multilayer structure
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Piro, AM; Romano, L; Spada, A; La Via, F; Grimaldi, MG; Rimini, E (literal)
Pagina inizio
  • 732 (literal)
Pagina fine
  • 736 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 219 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Catania Univ, INFM, I-95123 Catania, Italy; Catania Univ, Dipartimento Fis & Astron, IMM, IMETEM, I-95123 Catania, Italy; CNR, IMM, IMETEM, I-95121 Catania, Italy (literal)
Titolo
  • Structural characterization and oxygen concentration profiling of a Co/Si multilayer structure (literal)
Abstract
  • We report an accurate characterization (by RBS and XRD) of the stoichiometry and the phase formed in a multilayer sample (20 layers), constituted by the repetition of the stack 1.5 nm Co/27 nm Si. The samples were prepared by physical vapor deposition at a pressure of similar to10(-8) Torr. The multilayer structure is amorphous and a limited amount of mixing at the Si/Co interface occurs during deposition. Annealing at 600 degreesC resulted in the formation of a multilayer constituted by CoSi2/Si layers. Resonant backscattering spectrometry using a 3.036 MeV He+ has been used to quantify the oxygen contamination occurring during the deposition process. (literal)
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