Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM (Articolo in rivista)

Type
Label
  • Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1051/epjap:2004132 (literal)
Alternative label
  • Armigliato, A; Balboni, R; Frabboni, S (2004)
    Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM
    in EPJ. Applied physics (Print); EDP Sciences, Les Ulis Cedex (Francia)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Armigliato, A; Balboni, R; Frabboni, S (literal)
Pagina inizio
  • 49 (literal)
Pagina fine
  • 54 (literal)
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  • 27 (literal)
Rivista
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  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 1-3 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM Sez Bologna, I-40129 Bologna, Italy; Univ Modena & Reggio Emilia, Dipartimento Fis, I-41100 Modena, Italy; INFM, Natl Res Ctr S3, I-41100 Modena, Italy (literal)
Titolo
  • Strain mapping in deep sub-micron Si devices by convergent beam electron diffraction in the STEM (literal)
Abstract
  • The principles of the convergent beam electron diffraction technique, which is a point-to-point method for local strain analysis of thin crystals in the transmission electron microscope, are briefly outlined. The availability in modern instruments of scanning attachments coupled with high-angle annular dark-field detectors (STEM/HAADF) has recently enabled the automatic acquisition of diffraction patterns ill a large number of points, selected by digitally rastering the probe in a two dimensional region of the sample. As the components of the strain tensor can be calculated at each point, 2D strain mapping has thus become possible. An example of application of the technique to deep sub-micron shallow-trench isolation structures in silicon is reported. (literal)
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