Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1116/1.1622671 (literal)

Alternative label

• Giannazzo, F; Goghero, D; Raineri, V; Mirabella, S; Priolo, F; Liotta, SF; Rinaudo, S (2004)
  Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon
  in Journal of vacuum science & technology. B, Microelectronics and nanometer structures
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo, F; Goghero, D; Raineri, V; Mirabella, S; Priolo, F; Liotta, SF; Rinaudo, S (literal)

Pagina inizio

• 394 (literal)

Pagina fine

• 398 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 22 (literal)

Rivista

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• INFM, I-95123 Catania, Italy; Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy; CNR, IMM, I-95121 Catania, Italy; STMicroelect, I-95121 Catania, Italy (literal)

Titolo

• Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon (literal)

Abstract

• Scanning capacitance microscopy (SCM) has been performed both in cross-sectional and in angle-beveling configurations on ultranarrow B spikes with a full width at the half maximum smaller than the SCM probe diameter. A relevant improvement in the SCM response has been observed passing from the cross section to ten times magnification, but a peculiar asymmetric shape characterizes all the profiles on the beveling configuration and broadening and peak lowering are observed for the narrowest spikes. Accurate two-dimensional simulations allowed us to reproduce the experimentally observed peculiar phenomena. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Parole chiave di "Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITO RAINERI (Persona)
• FRANCESCO PRIOLO (Persona)
• SALVATORE MIRABELLA (Unità di personale interno)
• FILIPPO GIANNAZZO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of vacuum science & technology. B, Microelectronics and nanometer structures (Rivista)

Insieme di parole chiave di

• Parole chiave di "Simulation of scanning capacitance microscopy measurements on ultranarrow doping profiles in silicon" (Insieme di parole chiave)