SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.457-460.945 (literal)

Alternative label

• Poggi, A; Nipoti, R; Moscatelli, F; Cardinali, GC; Canino, M (2004)
  SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Poggi, A; Nipoti, R; Moscatelli, F; Cardinali, GC; Canino, M (literal)

Pagina inizio

• 945 (literal)

Pagina fine

• 948 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 457-460 (literal)

Rivista

• Materials science forum (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 4 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Bologna, I-40129 Bologna, Italy; Univ Perugia, DIEI, I-06125 Perugia, Italy (literal)

Titolo

• SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature (literal)

Abstract

• In this work we present the results obtained implanting high concentration (10(20) cm(-3)) of P at 300degreesC. The effect of the post-implantation annealing on the electrical properties and the surface morphology of the doped layer are investigated for different annealing temperatures. When the annealing temperature changed between 1650 and 1300degreesC the sheet resistance of the 0.2 mum thick implanted layers was in the range 300-900 Omega/sq. Nevertheless, the morphology of the implanted and uniplanted SiC surface was stronger modified by the higher post-implantation annealing temperature. I-V measurements were performed on the fabricated diodes to test the electrical performance of the n+/p junctions obtained with different post-implantation annealing temperature. Leakage current densities in the range 10(-7)-10(-8) Acm(-2) were measured at 100V and most diodes had the break-down at 720V, independently of the annealing conditions. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• GIAN CARLO CARDINALI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Insieme di parole chiave

• Parole chiave di "SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• GIAN CARLO CARDINALI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)

Insieme di parole chiave di

• Parole chiave di "SiC donor doping by 300 degrees C P implantation: Characterization of the doped layer properties in dependence of the post-implantation annealing temperature" (Insieme di parole chiave)