http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35717
Nanocrystal memories for FLASH device applications (Articolo in rivista)
- Type
- Label
- Nanocrystal memories for FLASH device applications (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.sse.2004.03.012 (literal)
- Alternative label
Ammendola, G.; Ancarani, V.; Triolo, V.; Bileci, M.; Corso, D.; Crupi, I.; Perniola, L.; Gerardi, C.; Lombardo, S.; DeSalvo, B. (2004)
Nanocrystal memories for FLASH device applications
in Solid-state electronics
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Ammendola, G.; Ancarani, V.; Triolo, V.; Bileci, M.; Corso, D.; Crupi, I.; Perniola, L.; Gerardi, C.; Lombardo, S.; DeSalvo, B. (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
- http://www.sciencedirect.com/science/article/pii/S003811010400098X (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- STMicroelectronics, Cent R&D, I-95121 Catania, Italy; CEA, LETI, F-38054 Grenoble, France; CNR, IMM, I-95121 Catania, Italy (literal)
- Titolo
- Nanocrystal memories for FLASH device applications (literal)
- Abstract
- Nanocrystals memory cells, in which the conventional polysilicon floating gate is replaced by an array of silicon nanocrystals, have been fabricated and characterized. Single cells and cell arrays of 1 Mb and 10 k have been realized by using a conventional 0.15 mum FLASH technology. Si nanocrystals are deposited on top of tunnel oxide by chemical vapor deposition. Properties of the memory cell have been investigated both for NAND and NOR applications in terms of program/erase window and programming times. Suitable program/erase threshold voltage window can be achieved with fast voltage pulses by adequate choice of tunnel and control dielectric. The feasibility of dual bit storage is also proven showing that the nanocrystals are separated and the inter-dot tunneling is inhibited. Good endurance and retention behaviors are demonstrated even after long cycling. (literal)
- Prodotto di
- Autore CNR
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