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Microcrystalline silicon p-i-n photodetectors for telecommunications and photovoltaic applications (Articolo in rivista)

Type

Label

Microcrystalline silicon p-i-n photodetectors for telecommunications and photovoltaic applications (Articolo in rivista) (literal)

Anno

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Alternative label

Summonte C, Rizzoli R, Centurioni E, Iencinella D, Moretti L, De Stefano L, Rendina I (2004)
Microcrystalline silicon p-i-n photodetectors for telecommunications and photovoltaic applications
in Journal of non-crystalline solids; ELSEVIER, NEW YORK (Stati Uniti d'America)
(literal)

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Summonte C, Rizzoli R, Centurioni E, Iencinella D, Moretti L, De Stefano L, Rendina I (literal)

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Pagina fine

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20th ICAMs International Conference August 2003, Campos do Jordao (Brazil) (literal)

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CNR, IMM, I-40129 Bologna, Italy Univ Bologna, DICASM, I-40136 Bologna, Italy CNR, IMM, I-80131 Naples, Italy (literal)

Titolo

Microcrystalline silicon p-i-n photodetectors for telecommunications and photovoltaic applications (literal)

Abstract

Very-high-frequency plasma enhanced chemical vapor deposition was used to fabricate microcrystalline silicon p-i-n photo-detectors. Optical simulation of reflectance measurements was used to monitor the crystalline fraction, which determines the quantum efficiency in the near infrared range, relevant for telecommunication applications. To improve the Up interface quality, a variable silane concentration was used in the early stages of the i-layer deposition. It is observed that a 50% large-grain fraction in the initial (200 nm) region of the i-layer results in a microcrystalline material well beyond the transition region between the amorphous and microcrystalline phase. The large-grain concentration in such initial layer is correlated with the open circuit voltage of the final p-i-n device. We suggest that the total elimination of the amorphous component in the heterophase transition region would result in excessive crystallization of the i-layer in the p-i-n device, which is to be technologically hindered by an on-time modulation of the deposition parameters. (literal)

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