http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35712
Low temperature oxidation of SiC preamorphized by ion implantation (Articolo in rivista)
- Type
- Label
- Low temperature oxidation of SiC preamorphized by ion implantation (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1063/1.1703822 (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Poggi A.; Nipoti R.; Solmi S.; Barozzi M.; Vanzetti L. (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR, IMM Sez Bologna, I-40129 Bologna, Italy; ITC IRST, I-38050 Trent, Italy (literal)
- Titolo
- Low temperature oxidation of SiC preamorphized by ion implantation (literal)
- Abstract
- In this article, we investigate the thermal growth of SiO2 films on 6H-SiC preamorphized by Ar+ ion implantation. The experimental conditions to grow oxide layers on SiC with high oxidation rate and low temperature have been determined. Rutherford back scattering channeling, secondary ion mass spectrometry, and x-ray photoelectron spectroscopy analyses have been used to investigate the oxide characteristics and composition. During wet oxidation at 800 degreesC, a linear growth rate of about 0.7 nm/min has been found for layers as thick as 240 nm. The presence of a SiO2Cx transition region between a stoichiometric SiO2 layer and the SiC substrate has been evidenced. The thickness of this transition layer increases with the oxidation time up to reach 118 nm for 390 min. (literal)
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