Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys (Articolo in rivista)

Type
Label
  • Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1778822 (literal)
Alternative label
  • Summonte C.; Rizzoli R.; Servidori M.; Milita S.; Nicoletti S.; Bianconi M.; Desalvo A.; Iencinella D. (2004)
    Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys
    in Journal of applied physics; AIP, American institute of physics, Melville, NY (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Summonte C.; Rizzoli R.; Servidori M.; Milita S.; Nicoletti S.; Bianconi M.; Desalvo A.; Iencinella D. (literal)
Pagina inizio
  • 3998 (literal)
Pagina fine
  • 4005 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://jap.aip.org/resource/1/japiau/v96/i7/p3998_s1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 96 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. CNR IMM, Sect Bologna, I-40129 Bologna, Italy 2. Univ Bologna, DICASM, I-40136 Bologna, Italy (literal)
Titolo
  • Laser induced crystallization of hydrogenated amorphous silicon-carbon alloys (literal)
Abstract
  • Laser induced crystallization of hydrogenated amorphous silicon carbon alloy (a-Si1-xCx:H) films has been investigated by means of synchrotron x-ray diffraction. The a-Si1-xCx:H films were deposited on (100) silicon wafers by very high frequency plasma enhanced chemical vapor deposition at 100 MHz in hydrogen diluted silane-methane gas mixtures. The substrate was kept at 250 degreesC or 350 degreesC and the stoichiometry was changed from x=0.20 to 0.63. The structural characterization of the as-grown films has been carried out by Rutherford backscattering (hydrogen concentration) and infrared spectroscopy (film ordering). The films were irradiated by a KrF excimer laser (248 nm) with varying energy density and number of pulses. After irradiation, the formation of SiC crystallites has been revealed by synchrotron x-ray diffraction. Besides SiC nanocrystals, the formation of crystalline Si and graphite is observed for under- (x<0.50) and over-stoichiometric (x>0.50) samples, respectively. The essential role played by hydrogen concentration and hydrogen bonding configuration in determining the melting threshold and the consequent SiC grain formation is highlighted. (C) 2004 American Institute of Physics. (literal)
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