Influence of defects on the kinetic of C49-C54TiSi(2) transformation (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Influence of defects on the kinetic of C49-C54TiSi(2) transformation (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Alternative label

• La Via, F; Mammoliti, F; Grimaldi, MG (2004)
  Influence of defects on the kinetic of C49-C54TiSi(2) transformation
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• La Via, F; Mammoliti, F; Grimaldi, MG (literal)

Pagina inizio

• 5577 (literal)

Pagina fine

• 5579 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 85 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, I-95121 Catania, Italy; INFM, MATIS, Dipartimento Fis Astron, I-95123 Catania, Italy (literal)

Titolo

• Influence of defects on the kinetic of C49-C54TiSi(2) transformation (literal)

Abstract

• TiSi2 C49 thin films with different concentrations of defects have been prepared by conventional annealing, in the 460-540 degreesC temperature range, of a Ti films deposited on a polycrystalline Si layer. The residual sheet resistance of the C49 films decreased with increasing both the annealing temperature and the annealing duration indicating the occurrence of defect annealing at higher temperature and/or longer times. A successive annealing at 650 degreesC was used to promote the C49-C54 transition and the transformation rate was measured by in situ sheet resistance measurements. The C49-C54 transition time decreased with the residual sheet resistance of the C49 phase. The activation energy for the transformation increased from 3.09+/-0.75 to 6.12+/-0.96 eV with increasing the defect concentration in the C49 phase. This strong dependence can explain the large variation of the kinetic results reported in the literature. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO LA VIA (Unità di personale interno)

Incoming links:

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR di

• FRANCESCO LA VIA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)