Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.4028/www.scientific.net/MSF.457-460.993 (literal)

Alternative label

• Moscatelli, F; Scorzoni, J; Poggi, A; Cardinali, GC; Nipoti, R (2004)
  Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Moscatelli, F; Scorzoni, J; Poggi, A; Cardinali, GC; Nipoti, R (literal)

Pagina inizio

• 993 (literal)

Pagina fine

• 996 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 457-460 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Univ Perugia, Ist Nazl Fis Nucl, I-06125 Perugia, Italy; Univ Perugia, Dipartimento Ingn Elettron & Informat, I-06125 Perugia, Italy; CNR, IMM, Sez Bologna, I-40129 Bologna, Italy (literal)

Titolo

• Extraction of the Schottky barrier height of Ti/Al contacts on 4H-SiC from I-V and C-V measurements (literal)

Abstract

• In this work we present Ti/Al contacts Schottky barrier heights measured by I-V, C-V at different temperatures on 4H-SiC. Differences between values of Schottky barrier height extracted from I-V and from C-V measurements are explained in terms of inhomogeneous barrier height. A value of qphi(Bn) = (2.08+/-0.03) eV has been obtained on n-type SiC through the C-V method which is not affected by errors due to inhomogeneities of the metal/semiconductor interface. From Transmission Line Measurements on p-type implanted layers as a function of the temperature, the barrier height qphi(Bp) of Ti/Al ohmic contacts has been extracted, yielding values between 0.6 and 0.9 eV. The sum of these two values of barrier height is q(phi(Bp) + phi(Bn)) is an element of [2.7, 3.0] eV, a value just a little smaller than the expected 4H-SiC energy gap. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIAN CARLO CARDINALI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Incoming links:

Autore CNR di

• GIAN CARLO CARDINALI (Unità di personale interno)
• ANTONELLA POGGI (Unità di personale interno)
• ROBERTA NIPOTI (Unità di personale interno)
• FRANCESCO MOSCATELLI (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)