Exclusion zone surrounding silicon nanoclusters formed by rapid thermal chemical vapour deposition on SiO2 (Articolo in rivista)

Type
Label
  • Exclusion zone surrounding silicon nanoclusters formed by rapid thermal chemical vapour deposition on SiO2 (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.susc.2003.12.026 (literal)
Alternative label
  • Puglisi, RA; Nicotra, G; Lombardo, S; Spinella, C; Ammendola, G; Bileci, M; Gerardi, C (2004)
    Exclusion zone surrounding silicon nanoclusters formed by rapid thermal chemical vapour deposition on SiO2
    in Surface science; Academic Press Elsevier, Amsterdam (Paesi Bassi)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Puglisi, RA; Nicotra, G; Lombardo, S; Spinella, C; Ammendola, G; Bileci, M; Gerardi, C (literal)
Pagina inizio
  • 119 (literal)
Pagina fine
  • 126 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://apps.webofknowledge.com/full_record.do?product=WOS&search_mode=GeneralSearch&qid=8&SID=1AEi7Ibad9oF38A3bdk&page=1&doc=1 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 550 (literal)
Rivista
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  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, IMM, Sez Catania, I-95121 Catania, Italy; STMicroelect, I-95121 Catania, Italy STMicroelectronics, Stradale Primosole 50, 95121 Catania, Italy (literal)
Titolo
  • Exclusion zone surrounding silicon nanoclusters formed by rapid thermal chemical vapour deposition on SiO2 (literal)
Abstract
  • We present results of an experimental investigation on the nearest-neighbour distance of silicon nanoclusters obtained by chemical vapour deposition of silane on silicon oxide substrates. Structural characterization has been performed by means of energy filtered transmission electron microscopy, which allowed us to observe dot sizes down to 0.5 nm in radius. We have found that silicon nanodots after deposition are separated by a minimum distance of about 4 nm. This effect has also been observed on samples deposited in the same conditions on substrates which have been subjected to different chemical treatments. The phenomenon is attributed to the existence of a capture zone, within which new deposited Si monomers preferentially contribute to the growth of a previously nucleated seed rather than aggregate to form a new nucleus. As a confirmation of this hypothesis, the average dot radius has been observed to be proportional to the capture region size, thus indicating a scaling behaviour for this process. Moreover when the interdot distance distribution is scaled to its average value, it collapses into a universal curve. (literal)
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