Enhancement of H-2 sensing properties of NiO-based thin films with a Pt surface modification (Articolo in rivista)

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  • Enhancement of H-2 sensing properties of NiO-based thin films with a Pt surface modification (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.snb.2004.04.109 (literal)
Alternative label
  • Hotovy I, Huran J, Siciliano P, Capone S, Spiess L, Rehacek V (2004)
    Enhancement of H-2 sensing properties of NiO-based thin films with a Pt surface modification
    in Sensors and actuators. B, Chemical (Print); Elsevier B.V., Amsterdam (Belgio)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Hotovy I, Huran J, Siciliano P, Capone S, Spiess L, Rehacek V (literal)
Pagina inizio
  • 300 (literal)
Pagina fine
  • 311 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.journals.elsevier.com/sensors-and-actuators-b-chemical/ (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 103 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 12 (literal)
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  • 1-2 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Slovak Tech Univ, Dept Microelect, Bratislava 81219, Slovakia; Slovak Acad Sci, Inst Elect Engn, Bratislava 84239, Slovakia; Sez Lecce, IMM, CNR, Inst Microelect & Microsyst, I-73100 Lecce, Italy; Tech Univ Ilmenau, Inst Werkstofftech, D-98684 Ilmenau, Germany (literal)
Titolo
  • Enhancement of H-2 sensing properties of NiO-based thin films with a Pt surface modification (literal)
Abstract
  • In this paper, we present the results concerning the Pt surface modification of nickel oxide thin films deposited by dc reactive magnetron sputtering. Pt very thin overlayers; with a thickness of about 3 and 5 nm have been sputtered on the top of NiO samples. The surface structure and morphology of the samples have been analysed by X-ray diffractometer (XRD) and by scanning electron microscopy (SEM) and atomic force microscopy (AFM), respectively. The electrical responses of the NiO-based sensors towards different H-2 concentration (500-5000 ppm) have been also considered. The Pt-modified NiO samples showed an enhancement of the response towards H-2 as compared to the unmodified NiO sample. The thickness of the Pt thin layers seems also an important parameter in determining the properties of the NiO films as H-2 sensors. (literal)
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