Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1016/j.mseb.2004.07.034 (literal)

Alternative label

• Ottaviano, L; Italia, M; Mannino, G; Privitera, V; Herden, M; Feudel, T (2004)
  Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers
  in Materials science & engineering. B, Solid-state materials for advanced technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ottaviano, L; Italia, M; Mannino, G; Privitera, V; Herden, M; Feudel, T (literal)

Pagina inizio

• 260 (literal)

Pagina fine

• 263 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 114 (literal)

Rivista

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM Sez Catania, I-95121 Catania, Italy; AMD Saxony LLC & Co KG, Dresden, Germany (literal)

Titolo

• Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers (literal)

Abstract

• MOS devices fabricated on Silicon On Insulator (SOI) substrates show several advantages with respect to those realised on silicon bulk. However, some aspects of the dopant diffusion and activation in SOI are not conclusively clarified yet. With this aim, we have investigated the mechanisms of electrical activation of dopants in very thin (100 or 60 nm) SOI materials. The samples have been doped with As or B, and then spike annealed in the temperature range 450-1125 degreesC. For comparison, selected samples have been pre-amorphised. Spreading resistance probe and four point probe (FPP) measurements have been used as characterisation techniques. The sheet resistance measured in SOI substrates implanted with As is similar to that measured in bulk Si. In contrast, the R-S values measured in BF2 implanted SOI samples are higher than that in bulk Si regardless of the temperature. Electrical profiles measured in SOI and bulk Si substrates implanted with As and BF2 are in agreement with the R-S measurements. (literal)

Prodotto di

• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• GIOVANNI MANNINO (Persona)
• MARKUS ITALIA (Persona)
• VITTORIO PRIVITERA (Persona)

Insieme di parole chiave

• Parole chiave di "Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• VITTORIO PRIVITERA (Persona)
• MARKUS ITALIA (Persona)
• GIOVANNI MANNINO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Sviluppo di metodologie avanzate per dispositivi elettronici micro e nanostrutturati (MD.P05.005.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science & engineering. B, Solid-state materials for advanced technology (Rivista)

Insieme di parole chiave di

• Parole chiave di "Electrical activation of B and As implants in Silicon On Insulator (SOI) wafers" (Insieme di parole chiave)