Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Alternative label

• Roccaforte, F; La Via, F; Baeri, A; Raineri, V; Calcagno, L; Mangano, F (2004)
  Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Roccaforte, F; La Via, F; Baeri, A; Raineri, V; Calcagno, L; Mangano, F (literal)

Pagina inizio

• 865 (literal)

Pagina fine

• 868 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 457 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, I-95121 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

• Effects of thermal treatments on the structural and electrical properties of Ni/Ti bilayers Schottky contacts on 6H-SiC (literal)

Abstract

• In this paper, the effects of thermal treatments on the structural and electrical properties of the system Ni/Ti/6H-SiC were studied. Ni/Ti bilayers were prepared by e-beam evaporation onto 6H-SiC substrates and annealed under vacuum between 400 and 650degreesC. Above 450degreesC a solid state reaction involving the metallic bilayer started and resulted in the formation of nickel and titanium silicides. The electrical characterization of the metal contact showed an increase of the Schottky barrier, from a value of 0.91 eV (typical of Ti) in the as deposited, towards 1.39 eV (typical of Ni2Si) in the high temperature annealed samples, along with a decrease of the device leakage current. The results, beyond giving interesting insights into the complicated reaction mechanism of the Ni/Ti system with SiC, may find applications in the control of the electrical properties of Schottky barriers on SiC. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FRANCESCO LA VIA (Unità di personale interno)
• VITO RAINERI (Persona)
• FABRIZIO ROCCAFORTE (Persona)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FRANCESCO LA VIA (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)