Development of silicon nitride dots for nanocrystal memory cells (Articolo in rivista)

Type
Label
  • Development of silicon nitride dots for nanocrystal memory cells (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.sse.2004.03.020 (literal)
Alternative label
  • Wan, YM; Buffet, N; van der Jeugd, K; Mur, P; Mariolle, D; Nicotra, G; Lombardo, S (2004)
    Development of silicon nitride dots for nanocrystal memory cells
    in Solid-state electronics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Wan, YM; Buffet, N; van der Jeugd, K; Mur, P; Mariolle, D; Nicotra, G; Lombardo, S (literal)
Pagina inizio
  • 1519 (literal)
Pagina fine
  • 1524 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://www.sciencedirect.com/science/article/pii/S0038110104001030 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 48 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • ASM, B-3001 Louvain, Belgium; CNR, IMM, I-95121 Catania, Italy; CEA, LETI, F-38054 Grenoble, France (literal)
Titolo
  • Development of silicon nitride dots for nanocrystal memory cells (literal)
Abstract
  • In this work, two approaches of fabricating silicon nitride (SiN) nanodots for nanocrystal memory cells were evaluated. The first method is an adaptation from a standard SiN process in an industrial low pressure chemical vapor deposition (LPCVD) batch reactor (A400(TM)), whereby dichlorosilane (DCS) and ammonia (NH3) are flowed simultaneously to form SiN nanodots. The second approach is a two-step process, whereby LPCVD was first performed to deposit silicon nanodots, and followed by nitridation with remotely generated nitrogen radicals. Based on morphological results, both approaches have been proven feasible. (literal)
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