http://www.cnr.it/ontology/cnr/individuo/prodotto/ID35656
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric (Articolo in rivista)
- Type
- Label
- Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric (Articolo in rivista) (literal)
- Anno
- 2005-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.microrel.2004.11.029 (literal)
- Alternative label
Spitale E, Corso D, Crupi I, Lombardo S, Gerardi C (2005)
Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric
in Microelectronics and reliability
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Spitale E, Corso D, Crupi I, Lombardo S, Gerardi C (literal)
- Pagina inizio
- Pagina fine
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
- Rivista
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- IMM, CNR, Catania, Italy; STMicroelect, Catania, Italy (literal)
- Titolo
- Improvement of the P/E window in nanocrystal memories by the use of high-k materials in the control dielectric (literal)
- Abstract
- In this paper nanocrystals memories program curves are shown and their saturation points (steady state condition) can be observed. We present a model that relates the voltage shift at the steady state (Delta V-Tss) to the gate program voltage (V-G). Starting from a good agreement between experimental data and simulations for nanocrystals memory cells with a conventional dielectric structure (SiO2), we present the estimated values of the Delta V-Tss vs V-G for different control stacks. Our investigation shows an improvement if a material with a high dielectric constant and a small conduction band-offset with respect to the SiO2, is placed between two SiO2 layers when the first of them is very thin. (literal)
- Prodotto di
- Autore CNR
Incoming links:
- Autore CNR di
- Prodotto
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi